Silicon Carbide

Silicon Carbide

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Morgan Thermal Ceramics offers a range of Silicon Carbide products which are produced by our facilities in South Africa, Germany and China.

The base of all silicon carbide (SiC) products is refractory grade alpha silicon carbide, produced in large electrical resistance furnaces at approximately 2400°C from a mixture of silicon, carbide, salt and sawdust. These refractory crystals are then classified, crushed and graded for use as grog or aggregate in bricks or shapes, or tubes.

The alpha silicon carbide crystals impart high thermal conductivity and refractoriness, low thermal expansion and outstanding abrasion/erosion resistance.

We offer a range of silicon carbide products – self-bonded, nitride bonded clay bonded and HalSiC.

Self Bonded

Many bonding systems are available that inter-connect the alpha silicon carbide grains and in the case of self bonded refractories, it is mainly in a matrix of silicon and aluminium-silicon glass. The bonds in self bonded refractories have been carefully formulated to give specific properties and subsequent performance criteria in any specific application.

Nitride Bonded

The silicon nitride bond phase in these refractories is the key to their superior performance in demanding applications.

The MORSIL™ Nitride bonding system allows Nitride bonded refractories to out-perform other silicon carbide based refractories using silicate, alumina silica, silicon oxynitride and beta silicon carbide bond systems. As with silicon carbide refractories, the base grain for MORSIL™ nitride bonded is refractory grade alpha slicon carbide. The alpha silicon carbide crystals impart high thermal conductivity and refractoriness, low thermal expansion and outstanding abrasion/erosion resistance.

To manufacture MORSIL™ nitride bonded, graded alpha or electric furnace silicon carbide crystals and fine silicon are formed into shape, and fired in a pure nitrogen atmosphere at approximately 1420ºC. The result is a refractory consisting of a mixture of alpha silicon carbide grain in a matrix of alpha and beta silicon nitride, with minor amounts of residual silicon and silicon oxynitride.

Due to the fact that the bond phase grows within existing porosity, there is little to no dimensional change upon firing and a net weight gain occurs.

This bond is mainly responsible for the extremely high modulus of rupture and outstanding oxidation and corrosion resistance of MORSIL™ nitride bonded silicon carbide.

Our MORSIL™ nitride bonded silicon carbide features high wear resistance, high strength, even at high temperatures, oxidation resistance even at very high temperatures, corrosion resistance, thermal shock resistance and high thermal conductivity. This material also features a high decomposition temperature, very low thermal expansion and good tribological properties.

Clay Bonded

Our clay bonded silicon carbide enable thick walled components to be manufactured as it features high mechanical strength and excellent thermal conductivity.  These properties make this material excellent for outer protection tubes for temperature measurement up to 1200°C in light and heavy metal smelts.


Our HalSiC range is generally used for kiln furniture due to its properties which include:

  • Withstanding temperatures up to 1600°C
  • Compact SiC matrix
  • Corrosion resistance

The properties above make this material an excellent choice for manufacturing large components. 

Our engineers have the skills, knowledge and capacity to work with you to select the right material for your product in your application.  Our global support network means that we can service customers from virtually anywhere in the world.